Electrolysis: processes – compositions used therein – and methods – Electrolytic erosion of a workpiece for shape or surface... – With irradiation or illumination
Patent
1997-09-19
1999-08-10
Valentine, Donald R.
Electrolysis: processes, compositions used therein, and methods
Electrolytic erosion of a workpiece for shape or surface...
With irradiation or illumination
205656, 205665, 204224M, C25F 312, C25F 700
Patent
active
059354100
ABSTRACT:
A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a selected area of a p-doped substrate in order to effect etching and structuring of the porous silicon in another area. A device for carrying out the process includes an illuminating system for supporting the etching process and for structuring the porous silicon, in which the illuminating system is selectively aimed during or after the formation of the porous silicon directly at a selected area of p-doped substrate in order to effect etching and structuring of the porous silicon in another area.
REFERENCES:
patent: 4532700 (1985-08-01), Kinney et al.
patent: 5336379 (1994-08-01), Chung et al.
patent: 5338415 (1994-08-01), Sailor et al.
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5458735 (1995-10-01), Richter et al.
patent: 5501787 (1996-03-01), Bassous et al.
H. Fooll, "Properties of Silicon-Electrolyte Junctions and Their Application to Silicon Characterization", Appl. Phys. A 53, pp. 8-19 (1991) (No Month).
R.L. Smith and S.D. Collins, "Porous silicon formation mechanisms", J. Appl. Phys., vol. 71, No. 8, pp. R1-R19, Apr. 15, 1992.
Eric J. Lee et al., "Photoinduced surface reactions of reverse-biased n-type porous Si" J. Vac. Sci. Technol. B, vol. 14, No. 4, pp. 2850-2854, Jul./Aug. 1996.
Berger Michael Gotz
Kruger Michael
Lerondel Gilles
Luth Hans
Romestain Robert
Forschungszentrum Julich GmbH
Valentine Donald R.
LandOfFree
Process and device for the lighting-supported structuring of por does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and device for the lighting-supported structuring of por, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and device for the lighting-supported structuring of por will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116601