Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1995-01-18
1997-07-08
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427530, 427562, 427571, 427575, 427569, 427523, 216 66, 216 67, 216 70, 20419211, C23C 1404, C23C 1400, H05H 130
Patent
active
056458975
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The invention concerns a process for surface-modification by physico-chemical reactions with the steps: with a reactive, gaseous fluid (gas, gas mixture, vapor or vapor mixture) which is to interact with the surface, surface by means of ions or plasmas, in order to trigger reactions between said partners,
The process therefore includes for instance the coating or etching of surfaces by physicochemical reactions of reactive, gaseous fluids (gases, gas mixtures, vapors or vapor mixtures) at the surfaces, supported by plasmas or ion beams, which mixtures or vapors at a surface with ion beams or a plasma, which are composed of radicals of said gases or vapors, or the surface with ion beams or with a plasma by forming volatile molecules from surface atoms and radicals of the said gases or vapors, or by the interaction of the ions at the surface.
It is known, that processes employing ion beams and plasmas in the presence of gases or vapors, depending on the choice of these gases or vapors, are used for the etching of surfaces, or the coating of surfaces, or for the production of thin films on surfaces. A summary of the foundations and of the technical state of the art of these processes is found in three publications: Thin Film Technology") Part 2; "Oberflachenomodifikation durch Teilchen und Quanten" ("Surface Modification by Particles and Quanta") Series Werkstoff-Forschung und Technik (Materials Research and Technology), Volume 6, Springer 1991; E. Harper, K. Miyake, J. R. McNeil, and S. M. Gorbatkin, Symposium Proceedings of the Materials Research Society, Vol. 223, Materials Research Society, Pittsburgh, USA, 1991; Procedes Plasma" (Contributions to the "8th International Colloquium on Plasma Processes"), Le Vide les Couches Minces, Supplement 256, 1991,
Subsumed to the term "Surface-Modification" have to be particularly surface-coating and surface-etching.
For the coating of surfaces from gases or vapors, energy has to be locally supplied at the surface for the physico-chemical reaction of the gases or vapors to create bonding with the surface, in order to obtain the coating of the surface with the desired compound. That is why thermal energy supply allows for instance to produce Si.sub.3 N.sub.4 -coatings on SiO.sub.2 -films by streaming gases of SiH.sub.4 and N.sub.2 against surfaces of SiO.sub.2 -films heated to high temperatures (>600.degree. C.). Such processes are called "Chemical Vapor Deposition", CVD. For many applications the CVD-process faces, however, the disadvantage to work only at high temperatures.
It is known, published application of the German Patent Office DE 4020816 A1, referred to as D1 in the following, to improve the CVD-process by special devices for the transport of reactants towards the surface, in order to obtain coatings with higher purity. To that end, in D1 for instance, substances are activated (ionized) by various methods and accelerated, then electromagnetically separated, and then decelerated and neutralized before they react at the surface to form a coating.
It is known, to work at reduced surface temperatures by supplying the energy for the physico-chemical reaction at the surface by impinging singly charged ions with kinetic energy. The ions may stem from a plasma or from an especially prepared ion beam.
In the case of a convectional plasma, one speaks of "Plasma Enhanced (or Activated) Chemical Vapor Deposition", PECVD or PACVD. With it one obtains a reduction of the surface temperature for the Si.sub.3 N.sub.4 -coating, described above, to about 300.degree. C. With the more recent "Electron Cyclotron Resonance", ECR-plasmas, this temperature can be further reduced to about 150.degree. C. One speaks then of ECR-PECVD, which is applied already, but is still subject of research for all its possible applications. On the progress with ECR-PECVD on the production of diamond coatings from the gas mixture of CH.sub.4 and H.sub.2 has been reported [F. Roy, M. Mermoux, B Marcus, III, pages 353 to 355].
The replacement of the plasma by an ion bea
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