Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-08-18
2000-05-09
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117217, 117218, C03B 1532
Patent
active
060598743
ABSTRACT:
A process for reducing the load on a seed crystal during the pulling of a single crystal uses a pulling device. An adhesive bond is made between a conical section at the start of the single crystal and a retaining body. The load on the seed crystal is reduced by creating a tensile stress between the retaining body and the pulling device.
REFERENCES:
patent: 4973518 (1990-11-01), Kida et al.
English Derwent Abstract corresponding to JP 9-301794.
Patent Abstracts of Japan, vol. 18, No. 46 (C-1157), Jan. 25, 1994 & JP 070968 A (Mitsubishi Materials Corp.).
English Derwent Abstract corresponding to JP 9-202691.
Hiteshew Felisa
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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