Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1999-05-25
2000-12-12
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117201, 117202, 117902, 117923, C30B 1536
Patent
active
061592846
ABSTRACT:
A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree. is produced; (b) the single crystal is arranged in such a way that the single crystal can be rotated about two axes of rotation, the axes of rotation being perpendicular to two planes that are spanned by two axes of an orthogonal coordinate system with axes x, y and z; (c) the single crystal is rotated about the axes of rotation until the crystal axis is parallel to the x,y plane and parallel to the x,z plane of the coordinate system; (d) pads are fitted to the ends of the single crystal; and (e) the single crystal is rotated about the crystal axis, the single crystal being clamped between the pads in a grinding machine, and a lateral surface of the single crystal is ground until the single crystal has a specific uniform diameter.
REFERENCES:
patent: 4710259 (1987-12-01), Howe et al.
patent: 5229082 (1993-07-01), Seidensticker et al.
patent: 5720271 (1998-02-01), Hauser
English Abstract corresponding to DE 28 27 050 (AN 1980-03657C [03].
G. Janus: FOR 13(1979) No. 3, p. 234-242 English Abstract corresponding to.
Andrae Christian
Frumm Josef
Lundt Holger
Olkrug Hans
Hiteshew Felisa
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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