Process and device for measuring the oxygen potential in a silic

Details Process and device for measuring the oxygen potential in a silic Process and device for measuring the oxygen potential in a silic

1998-08-14

2000-06-13

Tung, T.

Electrolysis: processes, compositions used therein, and methods

Electrolytic analysis or testing

For oxygen or oxygen containing compound

204422, G01N 27407

Patent

active

060745479

ABSTRACT:
A process for measuring the oxygen potential in a silicon melt uses an electrochemical potential probe which dips into the melt. The probe voltage is measured using this potential probe which is made of an SiO.sub.2 glass tube in which graphite is in direct contact with SiO.sub.2 glass. The graphite has a wire making contact with it at the graphite upper end. The probe is dipped into the silicon melt only to an extent such that the graphite/wire contact point contained in the SiO.sub.2 glass tube lies above the silicon melt.

REFERENCES:
patent: 3403090 (1968-09-01), Tajiri et al.
patent: 3794569 (1974-02-01), Kawai et al.
patent: 4313799 (1982-02-01), Perkius
patent: 5580439 (1996-12-01), Baucke et al.
patent: 5723337 (1998-03-01), Muller et al.
R. Bruckner; Properties and Structure of Vitreous Silica II, J. Non-Crystine Solids 5 (1971), 177.

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