Cutting – Other than completely through work thickness or through work... – Scoring
Patent
1990-06-05
1992-12-29
Phan, Hien H.
Cutting
Other than completely through work thickness or through work...
Scoring
83879, 83880, 83521, 225 96, C03B 3303, B26D 308
Patent
active
051741881
ABSTRACT:
A process and device for marking and cleaving plaquettes of monocrystalline semiconducting materials is described. According to invention, in order to mark off a reference direction onto a plaquette of a monocrystalline semiconducting material having a low hardness, an impression (1) is formed on the useful face of the plaquette and in a non useful area of that face, the impression bringing into view at least one direction from which the reference direction (9, 11, 13) is deduced, and the latter is marked off by means of a line on the non useful area. Since the reference direction corresponds to a cleavage plane of the plaquette, the latter, in addition, is cleaved by tracing a cleavage line along the reference direction on the other face of the plaquette.
REFERENCES:
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patent: 3230625 (1966-01-01), Meyer
patent: 3326071 (1967-06-01), Bushman et al.
patent: 3545325 (1970-12-01), Camasta
patent: 4046985 (1977-09-01), Gates
patent: 4117751 (1978-10-01), Inoue
IDA I., et al., Ultramicroscratching on Worked GaAs Surface, Rev. Elect. Comm. Lab., vol. 17, No. 9, Sep. 1969, pp. 1037-1055.
Commissariat a l''Energie Atomique
Meller Michael N.
Phan Hien H.
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