Process and device for growing single crystals

Details Process and device for growing single crystals Process and device for growing single crystals

2006-06-27

2006-06-27

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S034000, C117S208000, C117S213000, C117S217000

Reexamination Certificate

active

07067007

ABSTRACT:
The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting temperature of the output material. The invention also includes a device for practicing the above process.

REFERENCES:
patent: 6364947 (2002-04-01), Iida et al.
patent: 6409833 (2002-06-01), Park
patent: 6482263 (2002-11-01), Ferry et al.
patent: 6527859 (2003-03-01), Lee et al.
patent: 6554898 (2003-04-01), Lu et al.
patent: 417948 (1991-03-01), None

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