Process and device for growing crystal

Details Process and device for growing crystal Process and device for growing crystal

1978-10-30

1980-11-11

Sever, Frank

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156617SP, 156DIG83, B01J 1718

Patent

active

042332702

ABSTRACT:
Iridium from the crucible wall, taken into solution during the growth of crystals by the Czochralski technique, is trapped at the bottom of the iridium crucible by cooling at least the bottom of the crucible. This part of the crucible is cooled to a temperature above the solidification temperature of the melt and results in almost inclusion-free crystals.

REFERENCES:
IBM Technical Bulletin, vol. 15, No. 5, Oct. 72, p. 1520.
"Crucible-Base Cooling . . .", Cockayne et al., Journal of Crystal Growth, 15, No. 3, pp. 167-170, North-Holland Pblg.

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