Process and device for drying of substrates

Drying and gas or vapor contact with solids – Material treated by electromagnetic energy – Ultraviolet energy

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Details

34275, 34266, 34268, 432239, 438471, 438795, F26B 334

Patent

active

060166126

ABSTRACT:
To dry semiconductor substrates, especially silicon wafers subsequent to rinsing after etching, the substrate is exposed to the action of radiation which contains an IR portion and a UV portion, the IR portion being greater than the UV portion. The IR-UV radiation quickly dries the substrate and prevents contamination of the substrate with undesirable particles or limits it to a nondisruptive degree. To execute drying with IR-UV radiation, an arrangement is proposed in which the substrate is moved through directly from the treatment liquid (rinsing medium) between two rod-shaped radiators which emit IR-UV radiation.

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patent: 5722761 (1998-03-01), Knight

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