Process and device for bonding wafers

Details Process and device for bonding wafers Process and device for bonding wafers

2007-12-10

2009-06-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C228S123100

Reexamination Certificate

active

07547611

ABSTRACT:
The invention relates to a process and a device for bonding at least two substrates (1, 2), in particular semiconductor substrates or wafers, having the following features: a) a lower pressure plate (5) for holding the substrates (1, 2) and transferring pressure and, in particular, heat to the substrates (1, 2), b) an upper pressure plate (6) located opposite the lower pressure plate (5) for transferring pressure and, in particular, heat to the substrates (1, 2), c) heating means (7, 8) for heating up the substrates (1, 2), in particular to temperatures above 250° C., and d) pressure charging means, in particular an actuator (9), for charging the lower (5) and/or upper pressure plate (6) with a pressing force F, in particular higher than 500 N, preferably higher than 1,000 N. According to the invention, the upper pressure plate (6) and/or the lower pressure plate (5) are substantially free from the chemical elements Ti and Mo at least on one substrate contact surface (5o,6o) facing the substrates.

REFERENCES:
patent: 2007/0296035 (2007-12-01), George et al.
patent: 405700 (1999-10-01), None
patent: 2005-047059 (2005-02-01), None
patent: WO2004/026531 (2004-04-01), None

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