Cleaning and liquid contact with solids – Processes – Gas or vapor condensation or absorption on work
Reexamination Certificate
2007-09-04
2007-09-04
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Gas or vapor condensation or absorption on work
C134S002000, C134S025400, C134S030000, C134S032000, C134S034000, C134S042000, C438S906000
Reexamination Certificate
active
10859668
ABSTRACT:
A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.
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Bergman Eric J.
Gebhart Thomas Maximilia
Kornakov M.
Perkins Coie LLP
Semitool Inc.
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