Process and apparatus for theoptical alignment of patterns in tw

Optics: measuring and testing – By alignment in lateral direction – With registration indicia

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356400, 356356, 35016216, G01B 1100

Patent

active

046003096

ABSTRACT:
The present process makes use of at least two pairs of supplementary marks used for evaluating the relative dimensional distortions of the mask and the wafer, apart from three pairs of alignment marks respectively inscribed on a mask and a wafer disposed in parallel and in proximity relationship. Each pair of marks comprises a Fresnel zone lens and a broken line forming a grating with a constant spacing. Following alignment with the aid of the alignment marks, the supplementary marks are used for determining the amplitude of the distortions. The source - mask distance is adjusted to compensate the linear distortions and the positioning of the mask is adjusted to compensate the non-linear distortions.

REFERENCES:
patent: 4037969 (1977-07-01), Feldman et al.
patent: 4200395 (1980-04-01), Smith et al.
patent: 4292576 (1981-09-01), Watts
patent: 4311389 (1982-01-01), Fay et al.
patent: 4326805 (1982-04-01), Feldman et al.

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