Process and apparatus for the treatment of semiconductor wafers

Details Process and apparatus for the treatment of semiconductor wafers Process and apparatus for the treatment of semiconductor wafers

1993-07-16

1995-11-07

Dang, Thi

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 31, 134 37, 216 57, 216 94, 216 83, 1566621, 1566431, H01L 21304

Patent

active

054644801

ABSTRACT:
Provided is a process for removing organic materials from semiconductor wafers. The process involves the use of subambient deionized water with ozone absorbed into the water. The ozonated water flows over the wafers and the ozone oxidizes the organic materials from the wafers to insoluble gases. The ozonated water may be prepared in-situ by diffusing ozone into a tank containing wafers and subambient deionized water. Also provided is a tank for the treatment of semiconductor wafers with a fluid and a gas diffuser for diffusion of gases directly into fluids in a wafer treatment tank.

REFERENCES:
patent: 3150070 (1964-09-01), Ogawa
patent: 3421999 (1969-01-01), Corwin
patent: 4261933 (1981-04-01), Ewing et al.
patent: 4543130 (1985-09-01), Shwartzman
patent: 4572821 (1986-02-01), Brodard et al.
patent: 4622151 (1986-11-01), Hiltebrand et al.
patent: 4633893 (1987-01-01), McConnell et al.
patent: 4722355 (1988-02-01), Moe et al.
patent: 4740249 (1988-04-01), McConnell
patent: 4778532 (1988-10-01), McConnell et al.
patent: 4795497 (1989-01-01), McConnell et al.
patent: 4852516 (1989-08-01), Rubin et al.
patent: 4856544 (1989-08-01), McConnell
patent: 4899767 (1990-02-01), McConnell et al.
patent: 4917123 (1990-04-01), McConnell et al.
patent: 4924890 (1990-05-01), Giles et al.
patent: 5045120 (1991-09-01), Mittag et al.
patent: 5049320 (1991-09-01), Wang et al.
patent: 5051137 (1991-09-01), Nold
patent: 5082518 (1992-01-01), Molinaro
patent: 5102777 (1992-04-01), Lin et al.
patent: 5135391 (1992-08-01), Chhabra
patent: 5186841 (1993-02-01), Schick
patent: 5201958 (1993-04-01), Breunsbach et al.
Gadgil, "Single Wafer Processing in Stagnation Point Flow CVD Reactor: Prospects, Constraints, and Reactor Design," Journal of Electronic Materials, vol. 22, No. 2, pp. 171-177 (Feb. 1993).
Ohmi et al., "Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone-Injected Utrapure Water," Journal of Electrochemical Society, vol. 140, No. 3, pp. 804-810 (Mar. 1993).

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