Process and apparatus for the removal of resist

Details Process and apparatus for the removal of resist Process and apparatus for the removal of resist

1998-08-06

2000-03-21

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Stripping process or element

Forming nonplanar image

430329, 438747, 438725, 134 13, 216 40, G03C 1112

Patent

active

060401109

ABSTRACT:
The present invention provides a process for the removal of a resist layer formed on a semiconductor substrate, which enables easy removal of a resist layer without causing any damage on a gate oxide layer, and an apparatus therefor. The process comprises the steps of forming a gate oxide layer on the semiconductor substrate; forming a resist layer as a resist pattern on the gate oxide layer; removing the gate oxide layer at unnecessary area utilizing the resist layer as a mask; applying a pressure-sensitive adhesive sheet to the semiconductor substrate such that the gate oxide layer left on the semiconductor substrate and the resist layer are masked, and peeling the pressure-sensitive adhesive sheet together with the resist layer off the semiconductor substrate to separate and remove the resist layer from the semiconductor substrate.

REFERENCES:
patent: 4853669 (1989-08-01), Guckel et al.
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5466325 (1995-11-01), Mizuno et al.
patent: 5874200 (1999-02-01), Ra et al.

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