Process and apparatus for the qualification of a capacitive syst

Details Process and apparatus for the qualification of a capacitive syst Process and apparatus for the qualification of a capacitive syst

1992-03-17

1993-08-03

Strecker, Gerard R.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324158R, G01R 2726

Patent

active

052333078

ABSTRACT:
During a first period, the capacitive system to be qualified is polarized so as to be in the initial state (which can be accumulation or inversion in the case of a capacitive MIS semiconductor system). During a second period, the system is polarized so as to be in the depletion state with constant capacitance. As from a determined instant during the second period, the capacitive value of the system is recorded. This value serves as a reference for the servocontrol of the variation of the polarization voltage maintaining the capacitive system in the depletion state. The measurement of the servocontrol voltage makes it possible to obtain the desired qualification.

REFERENCES:
patent: 3824459 (1974-07-01), Uchida
patent: 3882391 (1975-05-01), Liles et al.
patent: 4323842 (1982-04-01), McGarrity et al.
patent: 4509012 (1985-04-01), Lin
patent: 5027064 (1991-06-01), Cripps
"A Modified Linear Sweep Tachnique for MOS-C Generation Rate Measurements", Pierret and Small, IEEE Transations on Electron Devices vol. ED-22 No. 11, Nov. 1975 (New York, N.Y.).
"A Computer Controlled System for Transient Capacitance Measurements of Deep Levels in Semiconductors", Woon et al., IEEE Transations on Instrumentation & Measurement, vol. 37, No. 1, Mar. 1988, New York, N.Y.

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