Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1995-05-16
1997-02-18
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
117 58, 117948, C30B 1906
Patent
active
056037627
ABSTRACT:
A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.
REFERENCES:
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3994755 (1976-11-01), Kamath et al.
patent: 4092208 (1978-05-01), Brice et al.
Applied Physics Letters, vol. 26, No. 1, Jan. 1, 1975, pp. 8-10, "Optical waveguide of LiNbO.sub.3 thin grown by liquid phase epitaxy".
J. Appl. Phys. 70 (5), Sep. 1, 1991, pp. 2536-2541, "LiNbO.sub.3 thin-film optical waveguide grown by liquid phase epitaxy and its application to second-harmonic generation".
Journal of Crystal Growth 132 (1993) pp. 48-60, "Liquid phase epitaxial growth of LiNbO.sub.3 thin film using Li.sub.2 O-B.sub.2 O.sub.3 flux system".
Imaeda Minoru
Kawaguchi Tatsuo
Kokune Nobuyuki
Ohuchi Ryuichi
Sogo Shoji
Kunemund Robert
NGK Insulators Ltd.
LandOfFree
Process and apparatus for the production of films of oxide type does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and apparatus for the production of films of oxide type , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and apparatus for the production of films of oxide type will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1599703