Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-08-09
1999-12-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117208, 117917, C30B 1522
Patent
active
06001170&
ABSTRACT:
A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.
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Derwent Abstract Corresponding to DD 270728.
Magnitnaya Gidrodinamika, Jul.-Sep. 1979, USSR, vol. 15, No. 3, ISSN 002515, pp. 145-146, XP000603324, Ivanov et al. "Electromagnetic excitation of oscillations in a crystallizing bar".
Fifth Hungarian Conference on Crystal Growth HCCG-5, Budapest, Hungary, Nov. 14-16, 1989, vol. 70, No. 3 ISSN 0231-4428, ACTA Physica, 1991 Hungary, pp. 177-181 XP002017107 Bochkarev et al. "Properties of Silicon Single Crystals grown in Magnetic fields" p. 117, col. 1.
Journal of Crystal Growth, vol. 52, 1981, Amsterdam, pp. 524-529 XP000604638, Mikelson et al. "Control of Crystallisation Process by Means of Magnetic Fields".
Ammon Wilfried Von
Gelfgat Yu M
Gorbunov Leonid
Tomzig Erich
Zulehner Werner
Kunemund Robert
Wacker Siltronik Gesellschaft fur Halbleitermaterialien AG
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