Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-08-06
1987-02-17
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, 427294, 427255, 4272554, 4272555, 134 2, 134 3, H01L 21285
Patent
active
046439145
ABSTRACT:
Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process.
According to the invention, in order to grow a silicide film of a refractory metal on a silicon substrate, the latter is cleaned, then thermally degassed under an ultra-high vacuum by bringing the substrate to a given temperature between approximately 600.degree. C. and approximately 800.degree. C. A refractory metal is then evaporated on to the substrate at said temperature, after which the temperature is progressively lowered.
Application to the production of electronic microcomponents.
REFERENCES:
C. J. Kircher et al, "Interconnection Method for Integrated Circuits", IBM Tech. Disc. Bul., vol. 13, No. 2, Jul. 1970.
Article by J. C. Bean, published in IEDM 81, pp. 6 to 13, IEEE.
Article by K. Y. Ahn et al., published in Thin Solid Films, vol. 118, No. 2, 10.8, 1984, pp. 163 to 170.
Article by R. D. Thompson et al., published in Thin Solid Films, vol. 93, No. 3/4, Jul. 1982, pp. 265 to 274.
Arnaud D'Avitaya Francois
Campidelli Yves
Pantel Roland
LandOfFree
Process and apparatus for the growth of films of silicides of re does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and apparatus for the growth of films of silicides of re, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and apparatus for the growth of films of silicides of re will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1938318