Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1993-09-10
1995-08-29
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117208, 117913, 4222451, 422254, C30B 3500
Patent
active
054451086
ABSTRACT:
A melt is crystallized by introducing the melt into a gap formed between two belts. The gap-forming flights of the belts travel in opposite directions. An upper one of the flights is cooled so that an upper surface of the melt crystallizes thereon and is removed from the gap on the upper belt. The lower belt removes the residual melt from the gap and that residual melt is recycled to the gap.
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Schermutzki Konrad
Wurmseher Herbert
Kunemund Robert
Santrade Ltd.
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