Cleaning and liquid contact with solids – Processes – Combined
Patent
1994-04-15
1995-12-05
Sheehan, John
Cleaning and liquid contact with solids
Processes
Combined
134 2, 134 3, B08B 704
Patent
active
054725160
ABSTRACT:
A method and apparatus for cleaning substrates in a process for device fabrication is disclosed. An aqueous solution of hydrogen peroxide and ammonium hydroxide is used to clean the substrates. The concentration of hydrogen peroxide and ammonium hydroxide in the cleaning solution is maintained at a certain level. The life of the cleaning solution is extended by the process. By maintaining the concentrations of the hydrogen peroxide and ammonium hydroxide in the solution within a desired range, the process also provides a cleaning solution that effectively cleans the substates throughout the entire time the solution is used to clean the substrates. The apparatus monitors certain solution parameters such as the pH and the conductivity of the cleaning solution and adds hydrogen peroxide and/or ammonium hydroxide to the cleaning solution to maintain the parameters, and thus the concentration of hydrogen peroxide and ammonium hydroxide, at desired levels.
REFERENCES:
patent: 5176756 (1993-01-01), Nakashima et al.
W. Kern, "The Evolution of Silicon Wafer Cleaning Technology," J. Electrochem. Soc., 137(6):1887 (1990).
M. Meuris, et al. "The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH.sub.4 OH/H.sub.2 O.sub.2 Mixtures," Jpn. J. Appl. Phys. 31 (Part 2, No. 11A): L1514 (1992).
H. Kobayashi, et al. "Study of Si Etch Rate in Various Compositions of SCI Solution," Jpn. J. Appl. Phys., 32 (Pt. 2, No. 1A/B):L45 (1992).
I. Takahashi, et al "Time-Dependent Variation of Composition of SCI Solution," Jpn. J. Appl. Phys. vol. 32, pp. L1183-L1185 (1993).
Hanson Karrie J.
Higashi Gregg S.
Rosamilia Joseph M.
AT&T Corp.
Botos Richard J.
Sheehan John
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