Process and apparatus for recrystallization of semiconductor lay

Details Process and apparatus for recrystallization of semiconductor lay Process and apparatus for recrystallization of semiconductor lay

1993-04-21

1994-06-21

Kunemund, Robert

Fishing, trapping, and vermin destroying

117 44, 117933, C30B 108

Patent

active

053225899

ABSTRACT:
A process for recrystallizing a semiconductor layer including the steps of forming a polycrystalline or amorphous semiconductor layer on a substrate and scanning energy beam on the semiconductor layer, wherein the energy beam is vibrated substantially in parallel to the direction of advance of the scanning of the energy beam. For carrying out the process, the apparatus includes a sample stage for holding a sample having a polycrystalline or amorphous semiconductor layer, an energy beam source for generating energy beam, a scanning means for scanning the energy beam on the semiconductor layer, and a beam-vibrating means for vibrating the energy beam substantially in parallel to the direction of advance of the scanning of the energy beam.

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