Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-02-25
1992-06-30
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 20429814, 20429819, C23C 1434
Patent
active
051260328
ABSTRACT:
An apparatus for the reactive coating of a substrate 1 with an electrically insultive material, silicon dioxide SiO.sub.2, for example, comprises a power supply 10 connected to a cathode 5 which is disposed in an evacuable coating chamber 15, 15a and surrounds the magnets 7, 8, 9. This cathode electrically interacts with the target 3 which is sputtered and the sputtered particles thereof are deposited on the substrate 1. A process gas and a reactive gas, e.g. argon with oxygen, are introduced into the coating chamber 15, 15a. The apparatus comprises two electrodes 44, 5 which are electrically insulated from one another and from the sputtering chamber 25. The one electrode is a magnetron cathode 5 where the cathode base 11 and the material of the target 3 are electrically connected to each other and the other electrode functions as an anode 44 in the plasma discharge. Provision is made for a DC power supply 10 which has an electrically floating output and the negative pole thereof, with a throttle 45 being interposed and a resistor 46 parallel to it, is connected to cathode 5 and the positive pole thereof via line 40 to anode 44. In order to achieve a stable coating process, a first low-induction, HF-suitable capacitor 34 is inserted between cathode 5 and anode 44 and a second low-induction capacitor 35 between anode 44 and the electrically insulated vacuum chamber 25.
REFERENCES:
patent: 3887451 (1975-07-01), Cuomo et al.
patent: 4131533 (1978-12-01), Bialko et al.
patent: 4931169 (1990-06-01), Scherer et al.
Roegels Stephan
Szczyrbowski Joachim
Leybold Aktiengesellschaft
Nguyen Nam
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