Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1998-06-23
2000-10-24
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 83, C30B 1320
Patent
active
061360910
ABSTRACT:
A silicon semiconductor material is charged in a double-structured crucible of an outer crucible and an inner crucible. The crucible is heated from the upper side thereof by the heat radiated from a heating member energized by an induction heating coil, so that the silicon raw semiconductor material is melted. The bottom of the crucible is mounted on a supporting bed cooled by cooling water supplied from a cooling medium tank. The silicon semiconductor material is melted in the inner crucible and starts solidifying from the bottom portion thereof. The silicon semiconductor material expands in volume at the time of solidification. Since a gap is formed between the inner crucible and the outer crucible, however, the outward extension of the inner crucible with the silicon semiconductor material alleviates a strain generated at the time of solidification, thereby producing an excellent polycrystalline semiconductor ingot. As a result, the strain in the polycrystalline semiconductor ingot produced by the unidirectional solidification process is reduced to improve the quality.
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Okuno Tetsuhiro
Yamazaki Motoharu
Hiteshew Felisa
Sharp Kabushiki Kaisha
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