Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1998-07-01
2000-08-29
Hiteshew, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
83217, 83222, C30B 1320
Patent
active
061102741
ABSTRACT:
A process and apparatus for producing a high-quality polycrystalline semiconductor ingot with excellent crystallographic properties are disclosed. The interior of an airtight vessel is kept in an inert atmosphere for semiconductors. A raw semiconductor material is charged in a crucible, and the raw semiconductor material is heated by an induction heating coil so as to be melted. Then the bottom of the crucible is deprived of heat for causing the raw semiconductor material to solidify, thereby producing a polycrystalline semiconductor. The semiconductor crystal grows in one direction from the bottom to the top of the crucible while the heat emission is changed in accordance with a predetermined relationship for keeping the solidification rate of the raw semiconductor material constant.
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Kyojiro Kaneko--"Continuous Casting of Multicrystalline Cilicon Ingot by Electromagnetic Casting", JPN J. Applied Physics, vol. 64.7 (1995), pp. 682-685.
Hiteshew Felisa C.
Sharp Kabushiki Kaisha
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