Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1998-06-18
2000-10-31
Niebling, John F.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
361523, 361529, 361535, 204227, 204228, H01G 900
Patent
active
061395927
ABSTRACT:
The object of the invention is to provide a process for producing an organic solid electrolyte capacitor which is diminished in leakage current, and an apparatus for use in practicing the process. The process includes the steps of completing a capacitor element by forming a dielectric oxide film over an anode body of valve metal and subsequently forming a cathode layer of solid conductive organic material over the oxide film, subjecting the capacitor element to an aging treatment, and forming a shell around the capacitor element. The apparatus, which is an aging apparatus for such capacitor elements, comprises a box for accommodating a plurality of capacitor elements, a conductive buffer layer provided inside the box, a conductive holding member disposed on the box for attaching thereto the outer end of anode lead of each of the capacitor elements, with a silver paste layer of the element in contact with the buffer layer, a current limiter connected to the buffer layer for restricting the current to be passed through the capacitor element to not greater than a predetermined value, and a power source having positive and negative electrodes connected to the holding member and the current limiter, respectively.
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Ito Yasuhiko
Kamigawa Hidenori
Kojima Youichi
Nishio Tomohiro
Sugita Yasutoshi
Nguyen Ha Tran
Niebling John F.
Sanyo Electric Co,. Ltd.
Sanyo Electronic Components Co., Ltd.
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