Process and apparatus for producing nitride single crystal

Details Process and apparatus for producing nitride single crystal Process and apparatus for producing nitride single crystal

2008-09-18

2010-11-16

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S071000, C117S079000

Reexamination Certificate

active

07833347

ABSTRACT:
A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.

REFERENCES:
patent: 4668481 (1987-05-01), Watanabe et al.
patent: 5941297 (1999-08-01), Young
patent: 6103182 (2000-08-01), Campbell
patent: 6273948 (2001-08-01), Porowski et al.
patent: 6790254 (2004-09-01), Feichtinger et al.
patent: 2003/0164138 (2003-09-01), Sarayama et al.
patent: 2005/0098090 (2005-05-01), Hirota et al.
patent: 2007/0209575 (2007-09-01), Iwai et al.
patent: 2008/0193363 (2008-08-01), Tsuji
patent: 2009/0000542 (2009-01-01), Iwai et al.
patent: 09-117660 (1997-05-01), None
patent: 2002-293696 (2002-10-01), None
patent: 2003-292400 (2003-10-01), None
patent: 2005-154254 (2005-06-01), None
patent: 2005-263622 (2005-09-01), None
patent: 2005/080648 (2005-09-01), None
patent: WO 2005/095682 (2005-10-01), None
patent: 2006/019098 (2006-02-01), None
patent: 2006/098458 (2006-09-01), None
patent: WO 2006095536 (2006-09-01), None
patent: WO 2007122949 (2007-11-01), None
patent: WO 2009081687 (2009-07-01), None
U.S. Appl. No. 12/181,402, filed Jul. 29, 2008, Iwai et al.
U.S. Appl. No. 12/190,230, filed Aug. 12, 2008, Iwai et al.
U.S. Appl. No. 12/192,428, filed Aug. 15, 2008, Iwai et al.
U.S. Appl. No. 12/234,786, filed Sep. 22, 2008, Imai et al.
U.S. Appl. No. 12/234,799, filed Sep. 22, 2008, Imai et al.
U.S. Appl. No. 12/284,470, filed Sep. 22, 2008, Ichimura et al.
Kawamura et al., “Growth of Large/Low-Dislocation GaN Single Crystal by LPE Growth,” Journal of Japanese Association for Crystal Growth, vol. 32, No. 1, 2005, pp. 3-9.

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