Process and apparatus for producing high purity oxidation on a s

Coating processes – Electrical product produced – Condenser or capacitor

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427 93, 118719, H01L 21316

Patent

active

046069356

ABSTRACT:
High purity oxidation is produced on a semiconductor substrate. The process includes heating the semiconductor substrate in the presence of an oxidizing ambient in a multi-walled reaction chamber containing a heating element. A halogen-containing ambient flows in an outer portion of the reaction chamber intermediate between the inner portion and the heating element to react with heating element contaminant. In a portion of the reaction chamber position intermediate of the inner portion and the outer portion, a gaseous ambient flows to remove water by-product from the reaction with the halogen which occurs in the outer portion of the reaction chamber. The apparatus for carrying out the above process is also provided.

REFERENCES:
patent: 3297411 (1967-01-01), Dear
patent: 3446659 (1969-05-01), Wisman
patent: 4123229 (1978-10-01), Carman
patent: 4258658 (1981-03-01), Politycki
patent: 4347431 (1982-08-01), Pearce et al.
J. Electrochem. Soc.: Solid-State Science and Technology, Jan. 1983, Bell Laboratories, Allentown, Pa. 18103, Paul F. Schmidt, "Contamination-Free High Temperature Treatment of Silicon or Other Materials", pp. 196-199.

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