Process and apparatus for preparing superconducting thin films

Details Process and apparatus for preparing superconducting thin films Process and apparatus for preparing superconducting thin films

1991-06-21

1993-01-26

Weisstuch, Aaron

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

20419224, 20429827, 20429829, 505731, H01L 3924, C23C 1435

Patent

active

051822563

ABSTRACT:
A process for preparing a thin film of high-temperature compound oxide superconductor by a magnetron sputtering method. A substrate and a target are arranged in parallel with each other in a vacuum chamber and one of the substrate and the target is moved relative to and in parallel with the other while the thin film is formed by sputtering.

REFERENCES:
patent: 4842704 (1989-06-01), Collins et al.
patent: 4965248 (1990-10-01), Poppe et al.
patent: 4968665 (1990-11-01), Ohuchi et al.
Simon R. W. et al; "Improvement of average film quality in RBa.sub.2 Cu.sub.3 O.sub.7-x Sputtered Films" IEEE Transactions on Magnetics, vol. 25, No. 2, Mar. 1989, N.Y., U.S. pp. 2433-2436.
Akutsu N. et al.; "Preparation of High-TcY-Ba-Cu-O Films by Three-Target Magnetron Sputtering" Japanese Journal of Applied Physics Letters, vol. 29, No. 4, Apr. 1990, Tokyo, JP, pp. 604-606.
Matsutani K. et al.; "Compositional Change of Sputtered YBa.sub.2 Cu.sub.3 O.sub.y Films with Substrate Location" Japanese Journal of Applied Physics, vol. 29, No. 1, Jan. 1990, Tokyo, JP pp. 79-80.

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