Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-06-20
1993-01-19
Weisstuch, Aaron
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 20429823, 20429829, 505731, 505816, H01L 3924, C23C 1435
Patent
active
051807084
ABSTRACT:
A process for preparing a thin film of high-temperature compound oxide superconductor having a large area on a substrate by a magnetron sputtering method. A magnetron electrode on which an elongated target is secuerd has an elongated shape and a substrate which also has an elongated shape are arranged in such a manner that a surface of the substrate makes a predetermined angle which is not zero with respect to the surface of said elongated target. The substrate is moved slowly along a direction which is transverse to the elongated dimension of the target.
REFERENCES:
patent: 5126318 (1992-06-01), Gavaler et al.
K. Matsutani et al. "Compositional Change of Sputtered YBa.sub.2 Cu.sub.3 O.sub.y films with Substrate Location" Japanese Journal of Applied Physics, vol. 29, No. 1, Jan. 1990, pp. 79-80.
Y. Kageyama et al. "Effect of a declination angle of substrate position on magnetron sputter deposition from YBa.sub.2 Cu.sub.3 O.sub.7-x target" Applied Physics Letters, vol. 55, No. 4, Sep. 4, 1989, pp. 1035-1037.
Patent Abstracts of Japan, vol. 14, No. 334 (c-074), Jul. 18, 1990.
Harada Keizo
Hattori Hisao
Itozaki Hideo
Sumitomo Electric Industries Ltd.
Weisstuch Aaron
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