Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
1998-06-15
2001-02-06
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S217000, C117S900000, C117S932000
Reexamination Certificate
active
06183553
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a process and apparatus for the preparation of single silicon crystals having a reduced level of contamination. More specifically, the present invention relates to a process and apparatus for the preparation of single silicon crystals wherein the structural graphite components in the crystal growth chamber of a Czochralski crystal pulling apparatus have been coated either with two protective layers including a first protective layer such as silicon carbide or glassy carbon, and a second protective layer of silicon, or coated with a single protective layer comprising a mixture of silicon carbide and silicon.
Single crystal silicon which is the starting material for most processes for the fabrication of semiconductor electronic components is commonly prepared with the so-called Czochralski process. In this process, polycrystalline silicon (“polysilicon”) is charged to a crucible, the polysilicon is melted, a seed crystal is immersed into the molten silicon and a single crystal silicon ingot is grown by slow extraction to a desired diameter.
The crystal pulling apparatus commonly utilized in the Czochralski process contains numerous internal parts surrounding the molten silicon containing crucible. These internal parts are constructed of graphite and generally referred to as “hot zone” parts. These hot zone parts, such as susceptors, heaters, thermal shields, heat reflectors or insulation, control the heat flow around the crucible and the cooling rate of the growing crystal. It has been recognized in the art for some time that although the graphite components used in the crystal pulling apparatus are not in direct contact with the molten silicon or the growing crystal, the use of such components at the high temperatures necessary to melt the polysilicon and grow the resulting crystal can result in the outgassing of particles and resulting high level contamination of the melt and subsequently the grown crystal with molybdenum, iron, copper, nickel, and other unwanted contaminants. It is well known that metals such as iron and molybdenum reduce minority carrier lifetimes in silicon wafers and copper and nickel can lead to oxygen induced stacking faults in the resulting crystal. Also, oxygen produced during the crystal growing process through the interaction of the silicon melt and the crucible which is present around the graphite components can cause the graphite to undergo oxidation and cause the further release of particles from pores in the graphite, as well as weaken the graphite structure and cause the parts to buckle.
In order to reduce the risk of crystal contamination with contaminants which can be outgassed by graphite parts located around the growing crystal, it has been common for all graphite components contained in the hot zone to be coated with a protective barrier layer such as silicon carbide or a glassy carbon coating. Because of its high temperature oxidation resistance, silicon carbide is widely used to coat graphite parts used in the hot zone of a crystal pulling apparatus. Silicon carbide coatings provide a barrier to impurity outgassing by sealing the graphite surface, thus requiring impurities to pass through the coating by grain boundary and bulk diffusion mechanisms. This coating is used to contain unwanted contaminants that are generated by the graphite during the crystal pulling process. The silicon carbide layer is generally on the order of about 75 to about 150 micrometers thick, and covers the graphite surface. One method of depositing a silicon carbide layer over graphite is described by Scheiffarth and Wagner in
Surface and Coatings Technology,
54/55 (1992) 13-18.
Similar to the silicon carbide coating the glassy carbon coating on graphite is used to contain unwanted contaminants that the graphite generates during exposure to high temperature. A method of providing a glassy carbon layer over a graphite body is described by Lewis et al. in U.S. Pat. No. 5,476,679.
Although the use of a silicon carbide coating or glassy carbon coating over graphite has reduced the amount of undesirable contaminants entering the silicon melt and/or the grown crystal, neither approach has been successful in totally eliminating the problem of particulate generation by graphite and the resultant contamination the grown crystal. Iron contamination from graphite remains a prominent problem even with the use of a silicon carbide or glassy carbon coating. Undesirable metals such as iron appear able to penetrate these coatings in an amount sufficient to degrade the resulting crystal. Also, it is believed that the typical silicon carbide coating provided by industry is itself contaminated with about 1 ppma iron. When this coating is heated in the silicon crystal growth environment, the iron can diffuse to the surface, evaporate, and become attached to the growing crystal.
Therefore, a need still exists in the semiconductor industry for a method which will further reduce the level of contaminants entering the silicon melt during the crystal growing process due to particulates generated from components within the hot zone of the crystal pulling apparatus.
SUMMARY OF THE INVENTION
Among the objects of the present invention, therefore, are the provision of a process for preparing single silicon crystals having a reduced level of contaminants; the provision of a process for coating silicon carbide or glassy carbon coated graphite components with a silicon layer; the provision of a process for coating graphite components with a mixture of silicon and silicon carbide; the provision of a process for gettering silicon crystal defect causing contaminants before they enter the melt or crystal; the provision of an apparatus for pulling silicon single crystals having a reduced level of metal contamination; the provision of a graphite component having two protective layers capable of reducing overall metal contamination in grown crystals; the provision of a graphite component having a single protective layer capable of reducing overall metal contamination in grown crystals; and the provision of increasing overall single crystal silicon yield.
Briefly, therefore, the present invention is directed to an apparatus for producing a silicon single crystal having a reduced amount of metal contamination grown by the Czochralski process. The apparatus comprises a growth chamber having a quartz crucible and structural components disposed within it. The structural components are constructed of graphite and are coated with two different protective layers. The first protective layer on the surface of the graphite structure is applied directly to the graphite and may be either silicon carbide or glassy carbon. The second protective layer covers the first layer, and is comprised of silicon.
The invention is further directed to an apparatus for producing a silicon single crystal having a reduced amount of metal contamination grown by the Czochralski process. The apparatus comprises a growth chamber having a quartz crucible and structural components disposed within it. The structural components are constructed of graphite and are coated with a protective layer. The protective layer is comprised of a mixture of silicon carbide and silicon.
The invention is further directed to a process for preparing a silicon single crystal having a reduced amount of metal contamination grown by the Czochralski process. The process includes coating a structural component constructed of graphite and disposed within the growth chamber with two separate protective coatings prior to initiating the crystal growing process. The first protective coating on the surface of the graphite is comprised of silicon carbide or glassy carbon. The second coating is comprised of silicon and covers the first coating. After the silicon coating is applied to the components the crystal pulling process is initiated.
The invention is still further directed to a process for preparing a silicon single crystal having a reduced amount of metal contamination grown by the Czochralski process. T
Holder John D.
Joslin Steven M.
Korb Harold W.
Kunemund Robert
MEMC Electronic Materials , Inc.
Senniger Powers Leavitt & Roedel
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