Process and apparatus for obtaining silicon from fluosilicic aci

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

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423342, 423490, C01B 3302

Patent

active

047537833

ABSTRACT:
Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

REFERENCES:
patent: 4442082 (1984-04-01), Sanjurjo
patent: 4529576 (1985-07-01), Sancier
patent: 4563976 (1986-01-01), Foell et al.
patent: 4563979 (1986-01-01), Falckenberg et al.

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