Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Patent
1982-12-27
1985-07-16
Dixon, Jr., William R.
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
423349, 75 844, 422158, 422187, C01B 3302
Patent
active
045295760
ABSTRACT:
Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (liquid Na preferred) is carried out essentialy continuously by injecting of reactants in substantially stoichiometric proportions into a reaction chamber having a controlled temperature thereby to form a mist or dispersion of reactants. The reactants being supplied at such a rate and temperature that the reaction takes place far enough away from the entry region to avoid plugging of reactants at the entry region, the reaction is completed and whereby essentially all reaction product solidifies and forms a free flowing powder before reaction product hits a reaction chamber wall. Thus, the reaction product does not adhere to the reaction chamber wall or pick up impurities therefrom. Separation of reaction products is easily carried out by either a leach or melt separation process.
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Capella Steven
Dixon Jr. William R.
SRI - International
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