Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2007-01-09
2007-01-09
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S069000, C117S070000, C117S077000, C117S078000, C117S073000, C117S074000, C117S076000, C117S011000, C117S952000
Reexamination Certificate
active
10147319
ABSTRACT:
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
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Doradziński Roman Marek
Dwiliński Robert Tomasz
Garczyński Jerzy
Kanbara Yasuo
Sierzputowski Leszek Piotr
Ammono Sp. z o.o.
Kunemund Robert
Nichia Corporation
Smith Patent Office
Song Matthew
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