Coating apparatus – Control means responsive to a randomly occurring sensed... – Responsive to condition of coating material
Patent
1996-11-20
1997-11-04
Bueker, Richard
Coating apparatus
Control means responsive to a randomly occurring sensed...
Responsive to condition of coating material
118863, 118687, 118708, 118712, 118715, 118725, C23C 1600
Patent
active
056835132
ABSTRACT:
A process and apparatus for manufacturing MOS devices are disclosed. The process comprises the step of controlling a first clearance linear speed (1st CLSs) X which is the flows of an oxidizing and an annealing gases defined as ratios of the flow rates thereof to the area of a clearance between a semiconductor wafer and the interior surface of the tube of a heat treating furnace to be at least 30 cm/min while the semiconductor wafer is oxidized and annealed. The process comprises the step of controlling a second clearance linear speed (2nd CLS) Y which is a flow of the annealing gas defined as a ratio of the flow rate thereof to the area of the clearance to be at least 100 cm/min while the semiconductor wafer is taken out of the tube. The process comprises the step of controlling a relation between the 1st CLSs X and the 2nd CLS Y so that Y.gtoreq.-2.5 X+275. The process and the apparatus reduce and control the fixed-charge density in the oxide film of a MOS device with a high repeatability.
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Bueker Richard
Shin-Etsu Handotai & Co., Ltd.
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