Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1983-05-23
1986-10-28
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, H01L 21285
Patent
active
046198407
ABSTRACT:
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
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Morosann et al, "Thin Film . . . " Vacuum, 31, No. 7, pp. 309-313, 1981.
"Plasma-Enhanced Deposition of Tungsten, Molybdenum, and Tungsten Silicide Films" by Tang et al, pp. 125-128, Solid State Technology/Mar. 1983.
"CVD Tungsten Interconnect and Contact Barrier Technology for VLSI" by Miller et al, pp 85-90, Solid State Technology/Dec. 1982.
Diem Michael
Fisk Michael A.
Goldman Jon C.
Smith John D.
Thermco Systems, Inc.
Valentine James C.
Williamson John K.
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