Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1983-12-08
1986-04-29
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 250251, 427 35, 427 38, H01J 37317
Patent
active
045859450
ABSTRACT:
In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target.
The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.
REFERENCES:
patent: 4108751 (1978-08-01), King
Wada, Nuclear Instruments and Methods, vol. 182/183, Apr.-May 1981, pp. 131-136.
Bruel Michel
Soubie Alain
Spinelli Philippe
Berman Jack I.
Commissariat a l''Energie Atomique
Nilles James E.
Smith Alfred E.
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