Process and apparatus for growing crystalline silicon plates by

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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264212, C30B 1534, H01L 21268

Patent

active

060721189

ABSTRACT:
A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.

REFERENCES:
patent: 4233338 (1980-11-01), Ricard et al.
patent: 4363769 (1982-12-01), Tsuya et al.
patent: 4481235 (1984-11-01), Foell et al.
patent: 4565600 (1986-01-01), Ricard

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