Process and apparatus for detecting aberrations in production pr

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Details

364550, 156626, 156345, H01L 21306, C23F 102

Patent

active

048477923

ABSTRACT:
An apparatus and process for detecting aberrations in production process operations is provided. In one embodiment, operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end-point trace (EPT) is defined (50), regions are defined in the reference EPT (52) and characteristics and tolerances for each region are defined (54). The etcher is run (56) and an actual EPT is obtained from the running of the etcher. The actual EPT is analyzed (58) by comparing characteristics of the regions of the actual EPT with characteristics of corresponding regions of the reference EPT. If the characteristics of the actual EPT exceed those of the reference EPT by predefined tolerances (62) a signal is generated (68). The system also checks for aberrations which are manifested by predefined EPT characteristics and signals when those are detected.

REFERENCES:
patent: 3985712 (1976-10-01), Garst
patent: 4493745 (1985-01-01), Chen et al.
patent: 4504920 (1985-03-01), Mickowski
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4611919 (1986-09-01), Brooks, Jr. et al.
patent: 4615761 (1986-10-01), Trada et al.
patent: 4675072 (1987-06-01), Bennett et al.
Khoury; "Real-Time Etch Plasma Monitor System"; IBM Technical Disclosure, vol. 25, No. 11A, Apr. 1983.
Marcoux et al; "Methods of End Point Detection for Plasma Etching"; H. P. Laboratories; Apr. 1981.

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