Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1993-08-18
1995-08-01
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 30, 117201, 117208, 117217, C30B 1526
Patent
active
054372429
ABSTRACT:
A process and an apparatus for carrying out the process provides for the accurate and simple control of the melt level when pulling single crystals according to the Czochralski process. The process comprises disposing a mechanical reference mark above the melt in such a way that it causes a reflection from the melt surface. An image of the metal surface is then recorded, and with the aid of the recorded image the distance of the mechanical reference mark from the melt surface is determined. An actual signal proportional to this distance is then generated and is compared with a set point signal, and the melt level is changed as a function of any difference observed.
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Patent Abstracts of Japan, C. Field, vol. 9, No. 171, Jul 16, 1985 The Patent Office Japanese Government, p. 66 C 291, No. 60-42 296.
Bauer Werner
Berger Walter
Hofstetter Christian
Mittelbach Bernd
Kunemund Robert
Wacker-Chemitronic Gessellschaft fuer Elektronik-Grundstoffe mbH
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