Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1993-02-26
1996-02-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 77, 117 81, 117 82, 117 33, 117953, C30B 1700
Patent
active
054939852
ABSTRACT:
The present invention is a process and apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth furnace heated by RF coils. Inside the furnace is a susceptor for holding a crucible. Above the crucible is selectively positioned a phosphorus improved injector. The non-phosphorus materials are placed in the crucible and melted to a desired temperature. The phosphorus material previously placed within the injector is heated by the radiant heat from the crucible to drive the phosphorus vapor into the melt through a tube. This is closely controlled by noting the temperature within the injector and adjusting the height of the injector above the melt to control the temperature within the phosphorus material. After the formation of the stoichiometric melt, the seed is inserted into the melt for crystal growth if so desired. A further improvement to the above apparatus is the use of an improved injector having a cover and a shield thereabout. The injector and cover have a central hole through which the seed is inserted. The injector is moved vertically within the cover to provide the proper temperature therein.
REFERENCES:
patent: 4609530 (1986-09-01), Morioka et al.
patent: 4783320 (1988-11-01), Adamski et al.
Ahern, Brian S., et al. "Magnetically Stabilized Kyropoulos Growth of Undoped InP," Materials Letters, vol. 8, No. 11,12, p. 486, (1989).
Farges, Jean-Pierre. "A method for the in-situ synthesis and growth of Indium phosphide in a Czochralski puller," Journal of Crystal Growth, vol. 52, p. 665 (1982).
Antypas, George A. "Synthesis of crucible shaped polycrystalline InP by phosphorus injection to B203 encapsulated Indium and in situ oriented singel crystal growth." Technical Report, 1983.
Farges, Jean-Pierre, et al. "Growth of InP from in-situ synthesized and from polycrystallne charges, " Report, 1983.
Adamski Joseph A.
Bliss David
Hilton Robert M.
Collier Stanton E.
Erlich Jacob N.
Kunemund Robert
The United States of America as represented by the Secretary of
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