Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of coating supply or source outside of primary...
Patent
1993-11-12
1996-01-02
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of coating supply or source outside of primary...
427577, 427575, 427571, 427122, 423466, B05D 306
Patent
active
054806860
ABSTRACT:
A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO. Hence, an etchant species (H.sub.2 O, OH, O) is replaced in the reactor by CO, a growth species and prevents undesirous consumption of diamond (the net-product). In a preferred embodiment, the apparatus assures conversion by preventing gas circumvention of the conversion zone prior to dissociation in the hydrogen atomization zone to produce the necessary atomic hydrogen for diamond growth.
REFERENCES:
patent: 4262631 (1981-04-01), Kubacki
patent: 4795880 (1989-01-01), Hayes et al.
patent: 4810935 (1989-03-01), Boswell
patent: 4844775 (1989-07-01), Keeble
patent: 5023109 (1991-06-01), Chin et al.
patent: 5110405 (1992-05-01), Sawabe et al.
patent: 5110577 (1992-05-01), Tamor et al.
patent: 5124179 (1992-06-01), Garg et al.
patent: 5142390 (1992-08-01), Ohta et al.
patent: 5175021 (1992-12-01), Bonsaver et al.
patent: 5217700 (1993-06-01), Kurihara et al.
patent: 5230931 (1993-07-01), Yamazaki et al.
patent: 5268201 (1993-12-01), Aomaki et al.
patent: 5275798 (1994-01-01), Aida
Rudder et al. "Chem Vap. dip. of diamond films from water vapor r.f.-plasma discharges", Appl. Phys. Lett. 60(3), 20 Jan. 1992 pp. 329-331.
T. R. Anthony, "Synthesis of Metastable Diamond", Mat. Res. Soc. Symp. Proc., vol. 162, pp. 61-83 (1990) no month.
Bachmann et al., "Diamond and Related Materials", vol. 1, No. 1, Aug. 15, 1991, Towards a general concept of diamond chemical vapour deposition.
W. A. Yarbrough, "Thermodynamics and the CVD of Diamond", Mat. Res. Soc. Symp. Proc. vol. 162, pp. 75-83, (1990) no month.
Hata et al., "Plasma Etching of Diamond Films", New Diamond No. 2, pp. 32-34 (Apr. 1990).
L. M. Hanssen et al., "Diamond Synthesis Using An Oxygen-Acetylene Torch", Materials Letters, vol. 7, No. 7,8, pp. 289-292, Dec. 1988.
Y. Hirose, "Combustion Flame Diamond Coating Method (Hirose Method); from its Birth to the Present", Materials Science Monographs, 73, p. 471, no month (1991).
Saito et al, "Diamond Synthesis from Methan-hydrogen-water mixed gas using microwave plasma" J. Mat. Sci. 23, pp. 842-844, (1988) no month.
Saito et al., "Diamond Synthesis from CO-H.sub.2 mixed gas plasma", J. of Mat. Sci. 25, pp. 1246-1250 (1990) no month.
K. Aoyama et al., "Diamond deposition with Ar-CO.sub.2 -CH.sub.4 -H.sub.2 plasma jets", Diamond and Related Materials, 2 pp. 337-341, (1993) no month.
T. Kawato et al., "Effects of Oxygen on CVD Diamond Synthesis", Jap. J. Appl. Phys. vol. 26, No. 9, pp. 1429-1432, 9 Sep. 1987.
Matsumoto, "Development of DVD Diamond Synthesis Techniques", Proceedings of the 1st Internat. Symposium on Diamond & Diamond-like Films, The Electrochemical Society, vol. 89-12, pp. 50-54, (1989) no month.
Chen et al., "An investigation of diamond growth on ferrous metals", Materials Science Monograph, 73, pp. 137-142, (1991) no month.
Amorim et al., "High-density plasma mode of an inductively coupled . . . ", J. Vac. Sci. Technol. B9(2), pp. 362-365, Mar./Apr. 1991.
Lede et al., "Production of Hydrogen by Direct Thermal Decomposition . . . ", Int. J. Hydrogen Energy, vol. 7, No. 12, pp. 939-950, (1982) no month.
Komiyama, "Tokyo University Researchers Synthesize Diamond Film at . . . ", Diamond Depositions: Science and Technology, p. 15, Aug. 1991.
S. Pang et al., "Thermal desorption measurements of aluminum alloy . . . ", J. Vac. Sci. Technol. A, vol. 5, No. 4, pp. 2516-2519, Jul./Aug. 1987.
Hendry Robert C.
Hudson George C.
Mantini Michael J.
Markunas Robert J.
Rudder Ronald A.
Padgett Marianne
Research Triangle Institute
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