Process and an apparatus for producing silicon carbide consistin

Details Process and an apparatus for producing silicon carbide consistin Process and an apparatus for producing silicon carbide consistin

1977-05-16

1979-07-24

Vertiz, O. R.

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

423345, C04B 3556, C01B 3136

Patent

active

041621670

ABSTRACT:
A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in FIG. 1 of the accompanying drawings.

REFERENCES:
patent: 2178773 (1939-11-01), Benner et al.

Affiliated with

Also associated with

Rating

Process and an apparatus for producing silicon carbide consistin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and an apparatus for producing silicon carbide consistin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and an apparatus for producing silicon carbide consistin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1286724