Procedure for the drying of silicon

Details Procedure for the drying of silicon Procedure for the drying of silicon

1996-08-05

1998-02-03

Lusignan, Michael

Coating processes

With post-treatment of coating or coating material

Heating or drying

427377, 4273722, 4274301, 34339, 34357, 34443, 34448, 134 3, 134 11, B05D 304, B08B 704, F26B 304, C23G 102

Patent

active

057142033

ABSTRACT:
The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between 0.001 and 50%. By adding a gas mixture containing O.sub.2 /O.sub.3 immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O.sub.2 /O.sub.3 during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface.

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Patents Abstracts of Japan, vol. 18, No. 456 (C-1242), 25 Aug. 1994, JP 6-144822, Production of Highly Pure Fine Silicon Particle and Production of Highly Pure Polycrystalline Silicon Using the Same Particle (Tonen Chemical Corp.), 24 May 1994.
Patent Abstracts of Japan, vol. 17, No. 259 (C-1061), 21 May 1993, JP5-4811, Method for Cleansing Polycrystalline Silicon (Shin Etsu Handotai Co Ltd), 14 Jan. 1993.
Patent Abstracts of Japan, vol. 16, No. 269 (C-0952), 17 Jun. 1992, JP4066175, Drain-Drying Method (Seiko Epson Corp), 02 Mar. 1992.
Marra, J., "Ultraclean Marangoni Drying," Particles in Gases and Liquids 3 (Detection, Characterization, and Control), pp. 269-282, 1993.

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