Procedure for the drying of silicon

Details Procedure for the drying of silicon Procedure for the drying of silicon

1998-01-16

2000-10-17

Beck, Shrive

Coating processes

Immersion or partial immersion

Inorganic base

4274301, 438906, 34340, 34342, 34357, B05D 118, F26B 500, B01D 1200

Patent

active

061328111

ABSTRACT:
The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between 0.001 and 50%. By removing the silicon from the bath at a speed of between 0.1 cm/sec and 20 cm/sec, the bath liquid drains from the hydrophobic surface to provide a clean, dry substrate.

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