Procedure for generating information for producing a pattern def

Details Procedure for generating information for producing a pattern def Procedure for generating information for producing a pattern def

1999-04-23

2000-08-22

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 60, 216 66, 438 8, 438742, 438949, H01L 2100

Patent

active

061072079

ABSTRACT:
A method for generating information for producing a pattern, defined by design information on a medium, using at least one direct-writing pattern generating process, which first provides the design information and then calculates correction data based on the provided design information and depending on the pattern generating process which corrects pattern faults in the pattern to be generated which were caused by the pattern generating process. The design and correction information is then separately provided to the direct-writing pattern generating process for its activation.

REFERENCES:
patent: 5725974 (1998-03-01), Kawahira
patent: 5792581 (1998-08-01), Ohnuma
patent: 5891806 (1999-04-01), Shibuya et al.
W. Maurer et al., "Evaluation of a fast and flexible OPC package: OPTISSIMO," Photomask Technology and Management, SPIE 2884, p. 412 ff., 1996.
C. Dolainsky et al., Application of a simple resist model to fast optial proximity correction, Optical Microlithography X, SPIE 3051, p. 774 ff., 1997.
C. Dolainsky, et al., "Evaluation of resist models for fast optical proximity correction," 17th BACUS Symposium on Photomask Tech., Proc., SPIE 3236, p. 202 ff., 1998.
H. Eisenmann et al., "PROXECCO-Proximity effect correction by convolution," Vac. Sci. Technol. (B.116), Nov./Dec. 1993, p. 2741-2745.

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