Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-09-18
2000-11-07
Nelms, David
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438301, 438305, 438308, 438350, 257295, 257377, 257386, H01L 2120
Patent
active
061436186
ABSTRACT:
A method for forming a polycide/oxide/polysilicon capacitor on a silicon wafer with improved dielectric stability and reliability is described wherein an in-situ high temperature anneal is applied to the wafer within a CVD reactor immediately prior to the deposition of the silicon oxide capacitor dielectric layer. The in-situ anneal causes sufficient fluorine outgassing of the polycide layer to prevent fluorine degradation of the subsequently deposited oxide capacitor dielectric. The capacitance of the completed capacitor is increased by as much as 10% when compared to a comparable not in-situ anneal conducted prior to the insertion of the wafer into the CVD reactor.
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Chang Tien-Chen
Chen Hsin-Pai
Liaw Yung-Haw
Tsai Ching-Tang
Ackerman Stephen B.
Dang Phuc T.
Nelms David
Saile George O.
Taiwan Semiconductor Manufacturing Company
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