Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1990-09-18
1992-01-07
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
20429841, 427 37, C23C 1432
Patent
active
050788485
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a procedure and an apparatus for the coating of materials.
BACKGROUND OF THE INVENTION
Coatings consisting of or resembling a diamond material have properties similar to corresponding traditional diamonds. The first property is hardness. Another significant mechanical property is a low friction coefficient. The resistance to wear is also extraordinary. Furthermore, such a coating remains unchanged in all known kinds of acids and bases. Diamond and diamond-like materials are therefore especially suited for the coating of objects subject to wear or corrosion, e.g. bearings without lubrication. A further notable factor is the high refraction index of diamonds.
In microelectronics, the high thermal capacity and thermal conductivity of diamond and diamond-like coatings provide significant advantages. To achieve higher component densities and speeds, it is necessary to reduce the structural size of integrated circuits. This makes it more difficult to remove the heat generated by the electric current, and it also means that good conductivity is more important than before.
In current practice, diamond-like coatings are produced by direct ion beam treatment, which is based on increasing the energy of ions. In direct ion beam coating, the coat is grown on the surface of the object material directly from the ion beam, from which the impurities have been removed by means of a separating magnet. The worst problem with this method is the difficulty of constructing an ion source of sufficient capacity. Another currently used method for growing a diamond coat is based on plasma-assisted vapor phase coat deposition (PAVCD). In this method, a crystal-line diamond is grown from a mixture of methane and hydrogen. Unlike the method based on the use of an energetic ion beam for growing a diamond coat, which can be implemented in room temperature, the PAVCD method requires a high temperature of the order of 800.degree. C. This is a serious disadvantage in view of the coating of conventional materials used in tools or construction.
SUMMARY OF THE INVENTION
The object of the present invention is to eliminate the drawbacks referred to above. The procedure of the invention for the coating of materials is characterized in that the material is coated using a pulsating plasma beam obtained from at least one electrode. The plasma beam is accelerated by a magnetic field and deflected by same to separate the uncharged particles from it, whereupon the plasma beam hits the surface of the material to be coated.
The advantages of the procedure are that it is simple and enables even large surfaces to be coated.
A preferred embodiment of the procedure of the invention is characterized in that the plasma beam consists of particles emitted from at least one electrode.
Another preferred embodiment of the procedure of the invention is characterized in that the coating is performed in a vacuum.
Another preferred embodiment of the procedure of the invention is characterized in that the coating process uses a gaseous medium which reacts with charged particles.
Another preferred embodiment of the procedure of the invention is characterized in that the plasma beam is deflected by a magnetic field produced by means of a deflected coil.
The apparatus designed for implementing the procedure of the invention for the coating of materials is characterized in that, for the coating of a material, the apparatus is provided with electrodes, at least one voltage source and at least one capacitor for producing a pulsating plasma beam and at least one deflected coil which generates a magnetic field that accelerates the plasma beam emitted by at least one electrode and deflects the beam to separate uncharged particles from it.
A preferred embodiment of the apparatus designed for implementing the procedure of the invention is characterized in that, to prevent oscillation of the voltage, the apparatus is provided with a diode connected in parallel with the capacitor.
Another preferred embodiment of the appa
REFERENCES:
patent: 4490229 (1984-12-01), Mirtich et al.
patent: 4565618 (1986-01-01), Banks
patent: 4645895 (1987-02-01), Boxman et al.
patent: 4929321 (1990-05-01), Buhl
"Pulsed Metallic-Plasma Generators", by Gilmour, Jr., et al, Proceedings of the IEEE, vol. 60, No. 8, Aug. 1972, pp. 977-992.
Anttila Asko
Hirvonen Juha-Pekka
Koskinen Jari
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