Prober for semiconductor integrated circuit element wafer

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324757, 324762, C01R 3102

Patent

active

055554229

ABSTRACT:
One type of a prober for use in making measurement or aging of electric circuit elements and parts such as semiconductor integrated circuits is used for testing the electrical performance of semiconductor integrated circuit elements formed on the semiconductor substrate, and comprises a prober substrate of which thermal expansion coefficient is substantially same as that of the semiconductor substrate. The prober substrate has a plurality of leads at its center portion, said leads correspond to the pads of the semiconductor integrated circuit element, each lead has a contact to abut on the corresponding pad, and said prober substrate has conductive layers formed thereon each having one end extending to said contact and other end terminating in the vicinity of the circumference of the prober substrate. Another type of a prober comprises a plurality of contacts to abut on the corresponding pads of an object to be tested; an electric circuit means for making electric connections between said contacts and the main system; and an actuators for permitting each of contacts or each group of contacts to be selectively abutted on or selectively removed from the pads of the object.

REFERENCES:
patent: 4585727 (1986-04-01), Reams
patent: 4820976 (1989-04-01), Brown
patent: 4987365 (1991-01-01), Shreeve et al.
patent: 5130644 (1992-07-01), Ott
patent: 5172050 (1992-12-01), Swapp
patent: 5177438 (1993-01-01), Littlebury et al.
patent: 5198757 (1993-03-01), Azumai
Patent Abstract of Japan, vol. 12, No. 46 (P-665) Feb. 12, 1988 & JP-A-62 192 674 Furuno Electric, Aug. 24, 1986.

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