Prober and probe contact method

Details Prober and probe contact method Prober and probe contact method

2007-07-11

2009-02-17

Nguyen, Vinh P (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S760020, C324S765010

Reexamination Certificate

active

07492176

ABSTRACT:
A prober and a method for reducing errors in the contact position between a probe and an electrode without lowering throughput when conducting a test of a wafer at a high or low temperature. The prober includes a wafer chuck for holding a wafer, a movement mechanism for moving the wafer chuck, a temperature adjustment mechanism for adjusting the temperature of the wafer chuck to maintain the wafer at a predetermined temperature, an alignment mechanism for measuring a positional relationship between the electrode of the device of the wafer and the probe, a movement control section for calculating the amount of movement to touch the electrode to the probe based on the positional relationship between the electrode and the probe measured by the alignment mechanism and controlling the movement mechanism based on the calculated amount of movement and a wafer temperature sensor that detects the temperature of the wafer before it is held on the wafer chuck.

REFERENCES:
patent: 6124725 (2000-09-01), Sato
patent: 5-343485 (1993-12-01), None
patent: 11-26520 (1999-01-01), None
patent: 2001-210683 (2001-08-01), None
Patent Abstracts of Japan, Publication No. 05-343485, Published on Dec. 24, 1993, in the name of Tsuta.
Patent Abstracts of Japan, Publication No. 11-026520, Published on Jan. 29, 1999, in the name of Akamatsu, et al.
Patent Abstracts of Japan, Publication No. 2001-210683, Published on Aug. 3, 2001, in the name of Chiba.

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