Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium
Reexamination Certificate
2007-03-05
2010-06-15
Huber, Paul (Department: 2627)
Dynamic information storage or retrieval
Specific detail of information handling portion of system
Electrical modification or sensing of storage medium
C369S288000
Reexamination Certificate
active
07738350
ABSTRACT:
According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
REFERENCES:
patent: 7301887 (2007-11-01), Rust et al.
patent: 7336524 (2008-02-01), Rust
patent: 7379412 (2008-05-01), Rust et al.
patent: 7414953 (2008-08-01), Rust et al.
Adams Donald
Anoikin Yevgeny V.
Kim Byong M.
Blakely , Sokoloff, Taylor & Zafman LLP
Huber Paul
Intel Corporation
LandOfFree
Probe storage with doped diamond-like carbon medium and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Probe storage with doped diamond-like carbon medium and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Probe storage with doped diamond-like carbon medium and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4225751